Body na spoluautora | Body za publikaci pro MU | Odkaz ISVaV | 2,01 | 14,04 | Optical Characterization of Ultra-Thin Iron and Iron Oxide Films
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2,34 | 4,68 | Towards limits of x-ray specular reflectivity
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9,93 | 19,86 | X-ray diffraction on precipitates in Czochralski-grown silicon
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3,51 | 14,04 | Vacancies and self-interstitials dynamics in silicon wafers
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0,00 | 0,00 | X-Ray Reflectivity measurements to evaluate thin films and multilayers thickness: preliminary results of the first world Round-Robin Test
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0,00 | 0,00 | Interdiffusion in Ge rich SiGe alloys studied by in-situ diffraction
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22,84 | 22,84 | Interdiffusion in SiGe alloys with Ge contents of 25% and 50% studied by x-ray reflectivity
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0,00 | 0,00 | Kinetics of oxygen, vacancies and self-interstitials in silicon wafers
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0,00 | 0,00 | Interdiffusion in SiGe alloys with Ge contents of 25% and 50% studied by x-ray reflectivity
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55,13 | 55,13 | The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers - Preliminary results from the second round-robin
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3,31 | 16,55 | Homogenization of CZ Si wafers by Tabula Rasa annealing
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12,54 | 25,09 | Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction
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37,16 | 37,16 | Structural studies of strain-symmetrised Si/SiGe structures grown by molecular beam epitaxy
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57,01 | 57,01 | Intersubband absorption of strain compensated, Si1-xGex valenceband quantum wells with 0.7<=x<=0.85
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31,15 | 62,31 | High temperature investigations of Si/SiGe based cascade structures using x-ray scattering methods
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0,00 | 0,00 | High Temperature in-situ Investigation of Si/SiGe Multilayers and Cascade Structures
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0,00 | 0,00 | HIGH TEMPERATURE INVESTIGATION OF SiGe/Si-BASED CASCADE EMITTERS IN THE FAR-INFRARED
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0,00 | 0,00 | IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SIGE MULTILAYERS AND CASCADE STRUCTURES
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0,00 | 0,00 | IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES
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0,00 | 0,00 | In-situ investigations of Si and Ge interdiffusion in Si cascade structures
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0,00 | 0,00 | Oxygen precipitation during two-stage annealing of Cz-Si
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0,00 | 0,00 | Study of oxygen precipitates in silicon using Bragg and Laue x-ray diffraction
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119,84 | 119,84 | Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment
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0,00 | 0,00 | Utilization of synchrotron radiation for in-situ diffusion studies
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22,38 | 44,76 | In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering
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2,34 | 4,68 | Interdiffusion in SiGe alloys studied by x-rays
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12,77 | 51,08 | Analysis of vacancy and interstitial nucleation kinetics in Si wafers during rapid thermal annealing
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(c) Michal Bulant, 2011