| Body na spoluautora | Body za publikaci pro MU | Odkaz ISVaV | | 14,84 | 59,37 | On the oxygen addition into nitrogen post-discharge
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| 0,00 | 0,00 | Modelling of surface processes taking place during reactive magnetron sputtering deposition process with simultaneous adding of hydrogen and oxygen
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| 14,50 | 43,49 | Modelling of the reactive sputtering process with non-uniform discharge current density and different temperature conditions
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| 0,00 | 0,00 | Plasma diagnostics using electron paramagnetic resonance
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| 0,00 | 0,00 | Spectroscopic investigation of high power pulsed microwave discharge
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| 11,20 | 33,60 | Technika pro zlepšení plstnících vlastností živočišných vláken využívající plazmovou úpravu
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| 0,00 | 0,00 | Advanced modeling of reactive sputtering process with non-linear discharge current density
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| 0,00 | 0,00 | Absolute Density of N Atoms Produced by Dielectric Barrier Atmospheric Discharge
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| 0,00 | 0,00 | Výzkum a aplikace nízkoteplotního plazmatu na ÚFE PřF MU v Brně
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| 0,00 | 0,00 | Characterisation of nitrogen-oxygen flowing afterglow
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| 0,00 | 0,00 | Harmonic analysis of discharge voltages as a tool to control RF sputtering deposition process
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| 0,00 | 0,00 | High power pulsed microvawe discharge: theory and experiment
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| 0,00 | 0,00 | Limits for H, N, O and O2 Detection by Means of Electron Paramagnetic Resonance
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| 0,00 | 0,00 | Ionization Processes and Plasma Chemistry in Pulsed RF Glow Discharge TOF Mass Spectroscopy for Thin Film Depth Profile Analyses
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| 0,00 | 0,00 | Influence of N2 and CH4 on depositon rate of boron based thin films prepared by magnetron sputtering
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| 0,00 | 0,00 | Influence of N2 and CH4 on deposition rate of boron based thin films prepared by magnetron sputtering
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| 33,21 | 66,41 | Harmonic analysis of discharge voltages as a tool to control the RF sputtering deposition process
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| 0,00 | 0,00 | Higher harmonic frequencies of discharge voltages as extremely sensitive marker of state of RF reactive sputtering deposition process
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| 0,00 | 0,00 | Hybrid PVD-PECVD sputtering deposition process - from properties of deposited films to process characteristics
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| 0,00 | 0,00 | Is it possible to control degree of target poisoning during RF reactive magnetron sputtering by higher harmonic frequencies of discharge voltage?
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| 0,00 | 0,00 | Time resolved measurements of the N2-O2 afterglow
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| 0,00 | 0,00 | Study of High Power Pulsed Microwave Discharge Afterglow
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| 7,43 | 37,16 | Theoretical study of pulsed microwave discharge in nitrogen
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| 0,00 | 0,00 | Investigation of High Power Pulsed Microwave Discharge
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| 0,00 | 0,00 | Ionized physical vapor deposition by high power fast pulsed magnetron discharge
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| 0,00 | 0,00 | Influence of the pulse duration of fast high power magnetron discharge on the amount of ion collected on the substrate
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| 0,00 | 0,00 | Modeling of high power pulsed microwave discharge
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| 25,00 | 50,00 | Reduction of transient regime in fast preionized high power pulsed magnetron discharge
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| 9,73 | 19,45 | Preionised pulsed magnetron discharges for ionised physical vapour deposition
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| 37,16 | 37,16 | Spatial characterization of an IPVD reactor: neutral gas temperature and interpretation of optical spectroscopy measurements
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| 0,00 | 0,00 | Role of Oxygen Admixture on Nitrogen Afterglow
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| 9,73 | 19,45 | Spectroscopic analysis of a pulsed magnetron discharge
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| 0,00 | 0,00 | Experimental Study and Modelling of the Afterglow of an N2-O2 Microwave Discharge
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| 0,00 | 0,00 | Diagnostics of high power pulsed microwave discharge
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| 53,63 | 53,63 | Comparison of the ionisation efficiency in a microwave and a radio-frequency assisted magnetron discharge
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| 0,00 | 0,00 | Dissociation Increase Due to Admixtures
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| 1,65 | 8,24 | Dissociation increase due to admixtures
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| 0,00 | 0,00 | Influence of Oxygen Admixture on Nitrogen Capacitively Coupled Discharge
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| 0,00 | 0,00 | On Oxygen Added into Nitrogen Post-Discharge
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| 0,00 | 0,00 | Modeling of reactive sputtering process with non-linear discharge current density
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| 0,00 | 0,00 | Measurement of Fundamental and Higher Harmonic Frequencies as Tool to Control RF Sputtering Deposition Process
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| 0,00 | 0,00 | Nitrogen Atom Behaviour in N2 Post-Discharge
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| 0,00 | 0,00 | Modeling of Radial Variation of Target Poisoning During Reactive Sputtering Deposition Process
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| 12,05 | 48,22 | Self-consistent spatio-temporal simulation of pulsed microwave discharge
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| 0,00 | 0,00 | Processes in afterglow of N2-O2 discharges
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| 37,55 | 75,09 | Study of a fast high power pulsed magnetron discharge: role of plasma deconfinement on the charged particle transport
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| 0,00 | 0,00 | Role of Neutral Gas Temperature on Hysteresis Behaviour of Reactive Sputtering Deposition Process
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| 58,81 | 58,81 | Analysis of the Transport of Ionized Titanium Atoms in a Highly Ionized Sputter Deposition Process
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| 44,16 | 44,16 | Experimental study of a pre-ionized high power pulsed magnetron discharge
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| 0,00 | 0,00 | Evolution of nitrogen atom density in the nitrogen post-discharge with oxygen admixture
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| 0,00 | 0,00 | Experimental Study of High Power Pulsed Microwave Discharge
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| 0,00 | 0,00 | Increase of Nitrogen Dissociation Degree due to Oxygen Admixture to Nitrogen Post-Discharge
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| 0,00 | 0,00 | Electron Density Measurement Using Self-Oscillating Resonant Cavity
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| 0,00 | 0,00 | Determination of N2(A) population from optical emission spectra
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| 0,00 | 0,00 | Evolution of N and O atom densities for oxygen admixture added into nitrogen afterglow
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| 0,00 | 0,00 | Model of pulsed microwave discharge
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| 0,00 | 0,00 | Model of reactive magnetron sputtering process with non-uniform discharge current density
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| 0,00 | 0,00 | Kinetics of O(3P) species in N2-O2 microwave post-discharge
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| 0,00 | 0,00 | Kinetic of O Species in Low-Pressure Microwave N2-O2 Afterglow
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| 0,00 | 0,00 | Plasmachemical Processes in Oxygen-Nitrogen Afterglow
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| 0,00 | 0,00 | Space and time dependent simulation of pulsed microwave discharge
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| 0,00 | 0,00 | Vliv reakčního času na přesnost stanovení koncentrace atomů dusíku titrační metodou
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| 4,65 | 37,16 | An experimental study of high power microwave pulsed discharge in nitrogen
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(c) Michal Bulant, 2011